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ALD Reactor

We have developed many Plasma Enhance or Thermal ALD reactors including gas panel to reactor for thin film deposition on wafers with different sizes up to 12” (300mm). Thus, we are not limited by standard wafer sizes, we can make substrate holder for any type of wafer. Perfect solution for R&D laboratories and Institutes. we can make it for batch deposition on five 6” (150 mm) or 8” (200mm) wafers. Please contact us for more details.

What is ALD?

Atomic Layer Deposition (ALD) is a thin-film deposition technique used to deposit thin films of various materials such as metals, oxides, and nitrides on a substrate. In ALD, a precursor gas is introduced into a reaction chamber containing the substrate, followed by a reaction with a second gas or vapor to form a thin layer of material on the substrate. The process is repeated multiple times, with each cycle depositing a uniform layer of material only a few angstroms thick.

ALD Cycle = Precursor dose => purge out => Reacting gas/vapour dose => Purge out

The key advantage of ALD is its ability to deposit very uniform and conformal thin films, with precise control over the thickness and composition of the film. This makes ALD ideal for applications in the semiconductor industry, where precise and controlled deposition of thin films is critical to device performance.

Some common applications of ALD include the deposition of high-k dielectrics for transistor gate insulation, the fabrication of thin-film solar cells, and the development of advanced energy storage materials.