We have developed RTP tool at Japan in collaboration with Japanese company Nippon-WST. This equipment is developed for wafer size of 300mm with in situ wafer temperature measurement using pyrometer. Perfect solution for R&D laboratories and Institutes. Please contact us for more details.
Rapid Thermal Processing (RTP) is a semiconductor manufacturing technique used to rapidly heat and cool semiconductor wafers in a controlled environment. It is used to modify the physical and electrical properties of the semiconductor material in a precise and controlled way.
RTP is carried out in a specialized chamber, where the wafer is rapidly heated to a high temperature, typically between 1000°C to 1200°C, for a very short duration of time, ranging from a few seconds to a few minutes. The temperature is then rapidly reduced to room temperature, usually within a few seconds, to prevent unwanted diffusion or reaction of the materials.
The rapid heating and cooling rates in RTP result in a rapid thermal cycle that can induce several changes in the physical, chemical, and electrical properties of the semiconductor material. RTP is used to modify the properties of the semiconductor material, such as doping levels, crystal structure, and defect density, to improve the performance of semiconductor devices, such as transistors, diodes, and memory cells.
RTP is a widely used technique in the semiconductor industry, and it is essential for the production of high-performance electronic devices with small feature sizes and high packing density. It is commonly used in the fabrication of integrated circuits, microprocessors, and memory devices. One of the key challenges in rapid thermal processing is accurate measurement and control of the wafer temperature. Monitoring the ambient with a thermocouple has only recently become feasible, in that the high temperature ramp rates prevent the wafer from coming to thermal equilibrium with the process chamber. One temperature control strategy involves in situ pyrometry to effect real time control.
1. Rapid temperature rise and drop
2. Gold plated reflector to protect heat loss
3. In situ wafer temperature monitoring using pyrometers
4. Water cooled reactor body
5. Height adjustable electrically isolated substrate holder (variable distance from the Heat source)
6. Substrate rotation up to 60rpm
7. Load-lock Automation
8. Clean-room ready
